ZAMONAVIY YARIMO‘TKAZGICH ELEKTRON ASBOBLAR: SI, SIC VA GAN ASOSIDAGI DIOD VA TRANZISTORLARNING QIYOSIY TAHLILI
Keywords:
yarimo‘tkazgich asboblar, diod, MOSFET, IGBT, SiC, GaN, HEMT, quvvat elektronikasi, kommutatsiya yo‘qotishlari, energiya samaradorligi.Abstract
Maqolada zamonaviy elektron asboblarning rivojlanishida kremniy (Si), kremniy karbidi (SiC) va galliy nitridi (GaN) yarimo‘tkazgich materiallarining o‘rni qiyosiy tahlil qilinadi. Diod, bipolyar tranzistor, MOSFET, IGBT, SiC MOSFET va GaN HEMT asboblarining ishlash prinsipi, o‘tkazuvchanlik va kommutatsiya yo‘qotishlari, issiqlik rejimi, ishchi kuchlanish va chastota diapazonlari umumlashtirilgan. Keng taqiqlangan zonali yarimo‘tkazgichlarning yuqori kritik elektr maydoni, yuqori harorat va yuqori chastotalarda ishlash imkoniyati quvvat elektronikasida energiya samaradorligini oshirishga xizmat qilishi ko‘rsatilgan. Shu bilan birga, GaN va SiC asboblarida drayver, elektromagnit moslashuv, issiqlikni chiqarish, qadoqlash va ishonchlilik masalalari muhim loyiha cheklovlari sifatida tahlil qilingan. Natijalar elektronika va qayta tiklanuvchi energiya qurilmalarida elektron kalitlarni tanlash uchun amaliy mezonlarni shakllantiradi.
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